Chip/Package Mechanical Stress Impact on 3-D IC Reliability and Mobility Variations

Abstract-In this paper, we propose a fast and accurate chip/package thermomechanical stress co-analysis tool for through-silicon-via (TSV)-based 3-D ICs. We use our tool for fullstack mechanical reliability as well as stress-aware timing analyses. First, we analyze the stress induced by chip/package interconnect elements, i.e., TSV, μ-bump, and package bump. Second, we explore and validate the principle of lateral and vertical linear superposition of stress tensors (LVLS), considering all chip/package elements. The proposed LVLS method greatly reduces the complexity of stress calculation compared with the conventional finite element analysis method with high enough accuracy for fullchip/package-scale stress simulations and reliability analysis. In addition, we build hole and electron mobility variation maps based on LVLS. Finally, we study the mechanical reliability issues and provide full-stack timing analysis results in practical 3-D chip/package designs including wide-I/O and block-level 3-D ICs

Impact of Mechanical Stress on the Full Chip Timing for Through-Silicon-Via-based 3-D ICs

Abstract-In this paper, we study the impact of throughsilicon-via (TSV) and shallow trench isolation (STI) stress on the timing variations of 3-D IC. We also propose the first systematic TSV-STI-stress-aware timing analysis and show how to optimize layouts for better performance. First, we generate a stress contour map with an analytical radial stress model for TSV. We also develop a stress model for STI from finite element analysis results. Then, depending on geometric relation between TSVs, STI, and transistors, the tensile and compressive stresses are converted to hole and electron mobility variations. Mobility-variation-aware cell library and netlist are generated and incorporated into an industrial engine for timing analysis of 3-D IC. We observe that TSV stress and STI stress interact with each other, and rise and fall time react differently to stress and relative locations with respect to both TSVs and STIs. Overall, TSV-STI-stress-induced timing variations can be as much as ±15% at the cell level. Thus, as an application to layout optimization, we exploit the stress-induced mobility enhancement to improve performance of 3-D ICs. We show that stress-aware layout perturbation could reduce cell delay by up to 23.37% and critical path delay by 6.67% in our test case